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MBR2060FCT Schematic ( PDF Datasheet ) - ASEMI
| Teilenummer | MBR2060FCT |
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| Beschreibung | High-Voltage Schottky Diodes | |
| Hersteller | ASEMI | |
| Logo |  |
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Gesamt 5 Seiten 
High-Voltage Schottky Diodes
■ Productor Character
● Half Bridge Rectified、Common Cathode Structure.
● Multilayer Metal -Silicon Potential Structure.
● Beautiful High Temperature Character.
● Have Over Voltage protect loop，high reliability.
● RoHs Product.
MBR2060CT/MBR2060FCT
■Primary Use
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency Invers Circuit.
● Low Voltage Continued Circuit and Protection Circuit.
■Summarize
● MBR2060CT/MBR2060FCT Device optimized for ultra-low forward
voltage drop to maximize efficiency in Power Supply applications.
Device Weight :
ITO-220AB-1.48g TO-220AB-1.96g TO-263-1.78g
PIN2
PIN3
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
*Average Rectified Forward Current (Rated VR-20Khz Square
Wave) - 50% duty cycle
Typical Thermal Resistance (per leg) Package =TO-220AB/TO-263
Package =ITO-220AB
Forward Peak Surge Current(Rated Load 8.3 Half Mssine
Wave-According to JEDEC Method)
Maximum Rate of Voltage Change ( at Rated VR )
Peak Repetitive Reverse Surge Current (2uS-1Khz)
Operating Junction Temperature
Storage Temperature
Electricity Character
Item
Test Condition
IR
TJ =25℃
TJ =125℃
VR=VRRM
VF
TJ =25℃
TJ =125℃
IF=10A
IF=10A
*IF(AV)= 10A×2
TYP.
0.58
www.asemi88.com
PIN1
Symbol
VRRM
IFAV
RθJc
IFSM
dv/dt
IRRM
TJ
TSTG
Data
60
20
2
4
150
10000
1
-40- +150
-40- +150
Unit
V
A
℃/W
℃/W
A
V/uS
A
℃
℃
MAX.
20
2
0.63
0.51
Unit
uA
mA
V
V
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| Seiten | Gesamt 5 Seiten | |
| PDF Download | [ MBR2060FCT Schematic.PDF ] | |
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