MBR2040FCT Schematic ( PDF Datasheet ) - Sooner Power Semiconductor

Teilenummer	MBR2040FCT
Beschreibung	High Power Schottky Barrier Rectifier
Hersteller	Sooner Power Semiconductor
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Gesamt 3 Seiten Sooner Power Semiconductor MBR2040FCT / MBR2060FCT High Power Schottky Barrier Rectifier Package Outline Dimensions ( millimeters ) BA L M C D 123 F E H K JN O I G PIN 1 PIN 3 Features • High Current Capability • Low Switching Noise • High Surge Capability • Low Power Loss & High Efficiency • Guard Ring Protection • Pd-free lead plating & Halogen-free part PIN 2 ITO-220AB Dim. Min. Max. A 9.90 10.10 B 2.90 3.50 C 2.55 2.85 D 14.80 15.40 E 13.00 13.80 F 3.45 3.75 G 5.10 BSC H 2.55 BSC I 0.30 0.90 J 1.00 1.55 K 8.40 8.60 L 4.20 4.80 M 2.90 3.30 N 2.50 2.90 O 0.6 BSC All Dimensions in millimeter Mechanical • Molded Plastic Low profile ITO-220AB • Plastic materials used carries underwriters laboratory flammability classification 94V-0 • Lead Temperature for Soldering Purposes： 265℃ Max. for 10 Seconds • Device Weight : Approximated 2.25 grams Maximum Ratings & Electrical Characteristics ( TA = 25℃ unless otherwise specified ) Parameter Symbol MBR MBR 2040FCT 2060FCT DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage Average Rectified Output Current (Total Device) Non-Repetitive Peak Forward Surge Current (Per Leg) (Surge applied at rated load conditions half wave, single phase, 60Hz) VRM VRWM VRRM IO IFSM 40 60 28 42 40 60 20 150 Instantaneous Forward Voltage (Per Leg) IF = 10A , TA = 25℃ VF 0.65 Instantaneous Reverse Current (Per Leg) VR = VRRM , TA = 25℃ VR = VRRM , TA = 125℃ IR NOTE： 1.Thermal resistance from junction to case per leg, with heatsink(1.35" x 0.95" x 0.18") Al-plate. 0.1 10 0.8 Units Volts Amps Amps Volts mA REV. 00 - JUN-2015 1
Seiten	Gesamt 3 Seiten
PDF Download	[ MBR2040FCT Schematic.PDF ]

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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
MBR2040FCT	(MBR2020FCT - MBR20100FCT) Schottky Barrier Rectifier	MCC
MBR2040FCT	High Power Schottky Barrier Rectifier	Sooner Power Semiconductor

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