|
|
Teilenummer | IRFP044 |
|
Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | Vishay | |
Logo | ||
Gesamt 8 Seiten Power MOSFET
IRFP044, SiHFP044
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 10 V
95
27
46
Single
0.028
TO-247
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247
IRFP044PbF
SiHFP044-E3
IRFP044
SiHFP044
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 19 µH, RG = 25 Ω, IAS = 57 A (see fig. 12).
c. ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
LIMIT
60
± 20
57
40
230
1.2
53
180
4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91197
S09-0064-Rev. A, 02-Feb-09
www.vishay.com
1
IRFP044, SiHFP044
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91197
S09-0064-Rev. A, 02-Feb-09
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ IRFP044 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
IRFP040 | (IRFP040 / IRFP042) N-Channel Power MOSFET | International Rectifier |
IRFP042 | (IRFP040 / IRFP042) N-Channel Power MOSFET | International Rectifier |
IRFP044 | Power MOSFET ( Transistor ) | Power MOSFET |
IRFP044 | Power MOSFET ( Transistor ) | Vishay |
IRFP044N | Power MOSFET ( Transistor ) | Power MOSFET |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |