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PDF SPD15P10PG Data sheet ( Hoja de datos )
| Número de pieza | SPD15P10PG | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SIPMOS® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
° Qualified according to AEC Q101
Product Summary
V DS
R DS(on),max
ID
SPD15P10P G
-100 V
0.24 Ω
-15 A
PG-TO252-3
Type
SPP15P10P G
SPD15P10P G
Package
PG-TO220-3
PG-TO252-3
Marking
15P10P
15P10P
Lead free Packing
Yes Non dry
Yes Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=-15 A, R GS=25 Ω
V GS
P tot T C=25 °C
T j, T stg
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
-15
-10.6
-60
230
±20
128
-55 ... 175
1C (1kV to 2kV)
260 °C
55/175/56
Unit
A
mJ
V
W
°C
Rev 1.8
page 1
2012-09-11
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
40
35
-10 V
30 -8 V
-7 V
25
20 -6 V
15
10
-5 V
5 -4.5 V
-4 V
0
0246
-V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
10
25 °C
8
8
125 °C
6
4
SPD15P10P G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
500
-4 V
-4.5 V
400
-5 V
300
-6 V
200
-7 V
-8 V
-10 V
100
10 0
10 20
-I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
30
20
15
10
5
2
0
1
Rev 1.8
35
-V GS [V]
0
70
page 5
5 10 15 20 25 30
-I D [A]
2012-09-11
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SPD15P10PG.PDF ] | |
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