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SPD30N03S2L-07G Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer SPD30N03S2L-07G
Beschreibung Power-Transistor
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 9 Seiten
SPD30N03S2L-07G Datasheet, Funktion
OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
° Pb-f.ree lead plating; RoHS compliant
SPD30N03S2L-07 G
Product Summary
VDS 30 V
RDS(on) 6.7
ID 30
PG-TO252-3
m
A
Type
Package
Marking
SPD30N03S2L-07G PG-TO252-3
2N03L07
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
30
30
120
250
13
6
±20
136
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
02-09-2008






SPD30N03S2L-07G Datasheet, Funktion
SPD30N03S2L-07 G
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 30 A, VGS = 10 V
SPD30N03S2L-07
16
12
10
.8 98%
6 typ
4
2
0
-60 -20 20 60 100 140 °C 200
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
pF
Ciss
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
2.5
V 1mA
1.5
1 85µA
0.5
0
-60 -20 20 60 100 °C 180
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 SPD30N03S2L-07
A
10 2
10 3 Coss
Crss
10 2
0 5 10 15 20 V 30
VDS
Page 6
10 1
10 0
0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
02-09-2008

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