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PDF GA10JT12-247 Data sheet ( Hoja de datos )
| Número de pieza | GA10JT12-247 | |
| Descripción | Normally - OFF Silicon Carbide Junction Transistor | |
| Fabricantes | GeneSiC | |
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Normally – OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA10JT12-247
VDS
RDS(ON)
ID (Tc = 25°C)
ID (Tc > 125°C)
hFE (Tc = 25°C)
=
=
=
=
=
1200 V
100 mΩ
25 A
10 A
98
G DS
TO-247
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA10JT12-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 155°C
Conditions
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 155 °C, tp > 100 ms
Value
1200
25
10
1.3
ID,max = 10
@ VDS ≤ VDSmax
>20
30
25
170 / 22
-55 to 175
Unit
V
A
A
A
A
Notes
Fig. 17
Fig. 17
Fig. 19
µs
V
V
W Fig. 16
°C
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 11
1 page  
GA10JT12-247
Figure 13: Typical Switching Times and Turn On Energy
Losses vs. Drain Current
C: Device Derating Figures
Figure 14: Typical Switching Times and Turn Off Energy
Losses vs. Drain Current
Figure 15: Typical Hard Switched Device Power Loss vs.
Switching Frequency 2
Figure 16: Power Derating Curve
Figure 17: Drain Current Derating vs. Temperature
Figure 18: Forward Bias Safe Operating Area at Tc= 25 oC
2 – Representative values based on device conduction and switching loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 5 of 11
5 Page 
Section VII: Package Dimensions
GA10JT12-247
TO-247
(4.318 REF.) 0.170 REF.
(5.486)
0.216
(15.748)
(16.256)
0.620
0.640
0.819
0.844
(20.803)
(21.438)
GA10JT12-247
XXXXXX
0.780
0.800
(19.812)
(20.320)
0.177
MAX
(4.496)
0.065 (1.651)
0.083 (2.108)
PACKAGE OUTLINE
0.242 BSC.
(6.147 BSC.)
0.22
(5.59)
0.171 (4.699)
0.208 (5.283)
0.059 (1.498)
0.098 (2.489)
0.012
(0.3)
Ø 0.118 (3.00)
Ø 0.140 (3.556)
0.143 (3.632)
Ø 0.283 (7.19)
Lot code
0.040 (1.016)
0.055 (1.397)
0.016 (0.406)
0.2146 (5.451) BSC. 0.031 (0.787)
0.075 (1.905)
0.115 (2.921)
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
0.55 (13.97)
0.236
(5.99)
0.054 0.045
(1.36) (1.14)
0.652
(16.56)
Date
2015/01/28
2014/11/12
2014/08/25
Revision
2
1
0
Revision History
Comments
Updated Electrical Characteristics
Updated Electrical Characteristics
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet GA10JT12-247.PDF ] | |
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