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Teilenummer | GA10JT12-263 |
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Beschreibung | Normally - OFF Silicon Carbide Junction Transistor | |
Hersteller | GeneSiC | |
Logo | ||
Gesamt 12 Seiten Normally – OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA10JT12-263
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
1200 V
120 mΩ
25 A
80
D
GDS
G
S
TO-263
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 3
Section V: Driving the GA10JT12-263 ........................................................................................................... 7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 155°C
Conditions
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 155 °C, tp > 100 ms
Value
1200
25
10
1.3
ID,max = 10
@ VDS ≤ VDSmax
>20
30
25
170 / 22
-55 to 175
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Unit
V
A
A
A
A
Notes
Fig. 17
Fig. 17
Fig. 19
µs
V
V
W Fig. 16
°C
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GA10JT12-263
Figure 19: Turn-Off Safe Operating Area
Figure 20: Transient Thermal Impedance
Figure 21: Drain Current Derating vs. Pulse Width
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg6 of 11
6 Page GA10JT12-263
Section VII: SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/sjt/GA10JT12-263_SPICE.pdf) into LTSPICE
(version 4) software for simulation of the GA10JT12-263.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 2.0
$
* $Date: 25-AUG-2014
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model GA10JT12 NPN
+ IS
5.00E-47
+ ISE
1.26E-28
+ EG
3.23
+ BF
85
+ BR
0.55
+ IKF
5000
+ NF
1
+ NE
2
+ RB
4.67
+ IRB
0.001
+ RBM
0.16
+ RE
0.005
+ RC
0.099
+ CJC
427.39E-12
+ VJC
3.1004
+ MJC
0.4752
+ CJE
1373E-12
+ VJE
10.6442
+ MJE
0.21376
+ XTI
3
+ XTB
-1.27
+ TRC1
6.8E-3
+ VCEO
1200
+ ICRATING 10
+ MFG
GeneSiC_Semiconductor
*
* End of GA10JT12 SPICE Model
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg1 of 1
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ GA10JT12-263 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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