|
|
Número de pieza | MTP50P03HDLG | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTP50P03HDLG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! MTP50P03HDLG
Power MOSFET
50 Amps, 30 Volts, Logic Level P−Channel
TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• These are Pb−Free Devices*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
VDSS
30
Drain−Gate Voltage (RGS = 1.0 MW)
VDGR
30
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 20
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
ID 50
ID 31
IDM 150
Total Power Dissipation
Derate above 25°C
PD 125
1.0
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 50 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient, when mounted with
the minimum recommended pad size
EAS 1250 mJ
RqJC
RqJA
°C/W
1.0
62.5
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
50 AMPERES, 30 VOLTS
RDS(on) = 25 mW
P−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
TO−220AB
CASE 221A
STYLE 5
M50P03HDLG
AYWW
1
2
3
1
Gate
2
Drain
3
Source
M50P03HDL = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MTP50P03HDLG TO−220AB
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 7
1
Publication Order Number:
MTP50P03HDL/D
1 page MTP50P03HDLG
6
5
Q1
4
3
30 1000
QT
VGS 25
VDD = 30 V
VGS = 10 V
ID = 50 A
TJ = 25°C
tr
Q2 tf
20
15 100
td(off)
2
ID = 50 A
10
TJ = 25°C
15
Q3
VDS
00
0 10 20 30 40 50 60 70 80
QT, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
td(on)
101 10
RG, GATE RESISTANCE (Ohms)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
50
VGS = 0 V
TJ = 25°C
40
30
20
10
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
www.onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MTP50P03HDLG.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTP50P03HDL | TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM | Motorola Semiconductors |
MTP50P03HDLG | Power MOSFET ( Transistor ) | ON Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |