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PDF STULED602 Data sheet ( Hoja de datos )
| Número de pieza | STULED602 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STDLED602, STULED602
N-channel 600 V, 4 Ω typ., 2 A Power MOSFET
in DPAK and IPAK packages
Datasheet − preliminary data
Features
Order codes VDS RDS(on)max. ID PTOT
STDLED602
TAB
TAB
t(s)3
1
ucDPAK
IPAK
3
2
1
olete ProdFigure 1. Internal schematic diagram
bsD(2,TAB)
roduct(s) - OG(1)
600 V
STULED602
4.5 Ω
2 A 45 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting application
Description
These Power MOSFETs boast extremely low on-
resistance, superior dynamic performance and
high avalanche capability, making them suitable
for the buck-boost and flyback topology.
lete P S(3)
Obso AM01476v1
Order codes
STDLED602
STULED602
Table 1. Device summary
Marking
Package
LED602
DPAK
IPAK
Packaging
Tape and reel
Tube
March 2013
DocID024406 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/19
www.st.com
19
1 page  
STDLED602, STULED602
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 2 A, VGS = 0
2A
-
8A
- 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 20)
200
- 800
8
ns
nC
A
trr Reverse recovery time
ISD = 2 A, di/dt = 100 A/µs
230 ns
Qrr
)IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 20)
t(s1. Pulse width limited by safe operating area.
c2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
- 950
8.5
nC
A
ProduTable 9. Gate-source Zener diode
teSymbol
Parameter
Test conditions
oleV(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
Min. Typ. Max. Unit
30 - V
ObsThe built-in back-to-back Zener diodes have been specifically designed to enhance not only
) -the device’s ESD capability, but also to make them capable of safely absorbing any voltage
t(stransients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
Obsolete ProducThe integrated Zener diodes thus eliminate the need for external components.
DocID024406 Rev 1
5/19
5 Page 
STDLED602, STULED602
Package mechanical data
Table 10. DPAK (TO-252) mechanical data
mm
Dim.
Min. Typ. Max.
A 2.20
2.40
A1 0.90
1.10
A2 0.03
0.23
b 0.64
0.90
b4 5.20
5.40
c 0.45
t(s)c2 0.48
D 6.00
ucD1
rodE 6.40
PE1
tee
lee1 4.40
soH 9.35
bL 1.00
- O(L1)
t(s)L2
cL4 0.60
uR
Obsolete ProdV2 0°
0.60
0.60
6.20
5.10
6.60
4.70
2.28
4.60
10.10
1.50
2.80
0.80
1.00
0.20
8°
DocID024406 Rev 1
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet STULED602.PDF ] | |
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