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ES6U3 Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer ES6U3
Beschreibung 4V Drive Nch+SBD MOSFET
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 5 Seiten
ES6U3 Datasheet, Funktion
4V Drive Nch+SBD MOSFET
ES6U3
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zDimensions (Unit : mm)
WEMT6
SOT-563T
(6) (5) (4)
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Built-in Low VF schottky barrier diode.
(1) (2) (3)
Abbriviated symbol : U03
zApplications
Switching
zInner circuit
(6)
(5)
(4)
zPackage specifications
Type
ES6U3
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
2
1
(1) (2)
1 ESD protection diode
2 Body diode
(1)Gate
(2)Source
(3)Anode
(3) (4)Cathode
(5)Drain
(6)Drain
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP 1
IS
ISP 1
Channel temperature
Power dissipation
Tch
PD 2
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
1 60Hz 1cyc.
2 Mounted on a ceramic board
Symbol
VRM
VR
IF
IFSM 1
Tj
PD 2
Limits
30
±20
±1.4
±2.8
0.5
2.8
150
0.7
Limits
25
20
0.5
2.0
150
0.5
Unit
V
V
A
A
A
A
°C
W / ELEMENT
Unit
V
V
A
A
°C
W / ELEMENT
<MOSFET and Di>
Parameter
Power dissipation
Range of storage temperature
Mounted on a ceramic board
Symbol
PD
Tstg
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
Limits
0.8
55 to +150
Unit
W / TOTAL
°C
1/4
2009.03 - Rev.A





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