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PDF SH8K2 Data sheet ( Hoja de datos )
| Número de pieza | SH8K2 | |
| Descripción | 4V Drive Nch+Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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4V Drive Nch+Nch MOSFET
SH8K2
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8K2
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw 10μs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
30
±20
±6.0
±24
1.6
6.4
2
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a) ∗
Limits
62.5
Unit
°C / W
Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SH8K2.PDF ] | |
Hoja de datos destacado
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| SH8K22 | 4V Drive Nch+Nch MOSFET | ROHM Semiconductor |
| SH8K3 | 4V Drive Nch+Nch MOSFET | ROHM Semiconductor |
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