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QS5U26 Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer QS5U26
Beschreibung 2.5V Drive Pch+SBD MOSFET
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 11 Seiten
QS5U26 Datasheet, Funktion
QS5U26
  2.5V Drive Pch+SBD MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
-20V
200mΩ
±1.5A
1.25W
lOutline
TSMT5
 
 
      
      
 
 
 
      
lFeatures
1) The QS5U26 combines Pch MOSFET with a
  Schottky barrier diode in a single TSMT5
  package.
2) Low on-state resistance with fast swicthing
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
5) Pb-free lead plating ; RoHS compliant.
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Load switch, DC/ DC conversion
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
<MOSFET>
Marking
U26
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Gate - Source voltage
VGSS
±12 V
Continuous drain current
ID ±1.5 A
Pulsed drain current
ID,
*1
pulse
±6.0
A
Continuous source current (body diode)
IS
-0.75
A
Pulsed source current (body diode)
IS,
*1
pulse
-3.0
A
Power dissipation
PD*3 0.9 W/element
Junction temperature
Tj 150
      
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/10
20150730 - Rev.001    






QS5U26 Datasheet, Funktion
QS5U26
      
lElectrical characteristic curves <MOSFET>
Fig.5 Source Current vs. Source Drain
Voltage
                Datasheet
Fig.6 Static Drain - Source On - State
Resistance vs. Drain Current (I)
Fig.7 Static Drain - Source On - State
Resistance vs. Drain Current (II)
Fig.8 Static Drain - Source On - State
Resistance vs. Drain Current (III)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
                             
6/10 20150730 - Rev.001

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