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Teilenummer | ES6U41 |
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Beschreibung | 2.5V Drive Nch+SBD MOSFET | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 5 Seiten 2.5V Drive Nch+SBD MOSFET
ES6U41
Structure
Silicon N-channel MOSFET /
Schottky barrier diode
Features
1) Nch MOSFET and schottky barrier diode-
are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
Applications
Switching
Package specifications
Package
Type
Code
Basic ordering unit (pieces)
ES6U41
Taping
T2R
8000
Absolute maximum ratings (Ta=25C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Channel temperature
Power dissipation
Tch
PD ∗2
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Limits
30
±12
±1.5
±6.0
0.75
6.0
150
0.7
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Symbol
VRM
VR
IF
IFSM ∗1
Tj
PD ∗2
Limits
25
20
0.5
2.0
150
0.5
Unit
V
V
A
A
°C
W / ELEMENT
<MOSFET and Di>
Parameter
Power dissipation
Range of storage temperature
∗ Mounted on a ceramic board
Symbol
PD ∗
Tstg
Limits
0.8
−55 to +150
Unit
W / TOTAL
°C
Dimensions (Unit : mm)
WEMT6
SOT-563T
(6) (5) (4)
(1) (2) (3)
Abbreviated symbol : U41
Inner circuit
(6) (5)
(4)
∗2
∗1
(1) (2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3)Anode
(3) (4)Cathode
(5)Drain
(6)Drain
www.rohm.com
○c 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.02 - Rev.B
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ ES6U41 Schematic.PDF ] |
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