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PDF US6M1 Data sheet ( Hoja de datos )
| Número de pieza | US6M1 | |
| Descripción | 4V+2.5V Drive Nch+Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
US6M1
4V+2.5V Drive Nch+Nch MOSFET
US6M1
zStructure
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
zApplication
Power switching, DC / DC converter.
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : M01
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M1
Taping
TR
3000
zEquivalent circuit
(6) (5) (4)
∗1
∗2 ∗2
∗1
(1) (2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
30 −20 V
20 −12 V
±1.4 ±1
A
±5.6 ±4
A
0.6 −0.4 A
5.6 −4 A
1 W / TOTAL
0.7 W / ELEMENT
150 °C
−55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
∗2 Mounted on a ceramic board.
Symbol
Rth (ch-a)∗
Limits
125
179
Unit
°C / W /TOTAL
°C / W / ELEMENT
Rev.B
1/7
1 page  
Transistors
P-ch
zElectrical characteristic curves
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Crss
Coss
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
tf
100
td (off)
10 td (on)
tr
Ta=25°C
VDD= −15V
VGS= −4.5V
RG=10Ω
Pulsed
1
0.01 0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.2 Switching Characteristics
US6M1
8
Ta=25°C
7 VDD= −15V
ID= −1A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
Ta=25°C
VDS= −10V
Pulsed
1
0.1
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Typical Transfer Characteristics
1000 10
Ta=25°C
Pulsed
750
ID= −1A
500 ID= −0.5A
Ta=125°C
1 Ta=75°C
Ta=25°C
Ta= −25°C
0.1
250
VGS=0V
Pulsed
0
0 2 4 6 8 10 12
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
Ta=125°C
1000 Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −4.5V
Pulsed
10000
Ta=125°C
1000 Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −4V
Pulsed
10000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1000
VGS= −2.5V
Pulsed
100
0.01
0.1 1
DRAIN CURRENT : −ID (A)
10
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
100
0.01
0.1 1
DRAIN CURRENT : −ID (A)
10
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
100
0.01
0.1 1
DRAIN CURRENT : −ID (A)
10
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.B
5/7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet US6M1.PDF ] | |
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