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Teilenummer | R5016ANX |
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Beschreibung | Nch 500V 16A Power MOSFET | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 14 Seiten R5016ANX
Nch 500V 16A Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
500V
0.27Ω
±16A
50W
lOutline
TO-220FM
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
500
Taping code
-
Marking
R5016ANX
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
dv/dt
500
±16
±7.8
±64
±30
17
3.5
8
50
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
℃
℃
V/ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/13
20131113 - Rev.001
R5016ANX
lElectrical characteristic curves
Datasheet
Fig.4 Avalanche Current vs. Inductive Load
Fig.5 Avalanche Power Losses
Fig.6 Avalanche Energy Derating Curve
vs. Junction Temperature
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
6/13
20131113 - Rev.001
6 Page R5016ANX
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Datasheet
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
12/13
20131113 - Rev.001
12 Page | ||
Seiten | Gesamt 14 Seiten | |
PDF Download | [ R5016ANX Schematic.PDF ] |
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