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Teilenummer | IRF7351PbF |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 10 Seiten Applications
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
l Low Power Motor Drive Systems
PD - 97436
IRF7351PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
60V 17.8mΩ@VGS = 10V 24nC
Benefits
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Max.
60
± 20
8.0
6.4
64
2.0
1.28
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
Notes through
are on page 10
www.irf.com
1
11/18/09
IRF7351PbF
50
ID = 8.0A
40
30
TJ = 125°C
20
10 TJ = 25°C
0
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
20VVGS
tp
D.U.T
IAS
0.01Ω
+
-
VDD A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1400
1200
1000
ID
TOP
0.53A
0.79A
BOTTOM 6.4A
800
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 15a. Switching Time Test Circuit
VDS
90%
IAS
Fig 14b. Unclamped Inductive Waveforms
6
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
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6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ IRF7351PbF Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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