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IRF7351PbF Datasheet Detailansicht


International Rectifier - Power MOSFET

Teilenummer IRF7351PbF
Beschreibung Power MOSFET
Hersteller International Rectifier
Logo International Rectifier Logo 
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IRF7351PbF Datenblatt PDF
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IRF7351PbF Datasheet, Funktion
IRF7351PbF
50
ID = 8.0A
40
30
TJ = 125°C
20
10 TJ = 25°C
0
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
20VVGS
tp
D.U.T
IAS
0.01
+
-
VDD A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1400
1200
1000
ID
TOP
0.53A
0.79A
BOTTOM 6.4A
800
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 15a. Switching Time Test Circuit
VDS
90%
IAS
Fig 14b. Unclamped Inductive Waveforms
6
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
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TeilenummerBeschreibungHersteller
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