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Teilenummer | RT1A050ZP |
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Beschreibung | 1.5V Drive Pch MOSFET | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 12 Seiten RT1A050ZP
Pch -12V -5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-12V
26mΩ
±5A
1.25W
lFeatures
1) Low on - resistance.
2) High power package
3) Low voltage drive(1.5V)
lOutline
TSST8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
Marking
YH
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-12 V
Continuous drain current
ID ±5 A
Pulsed drain current
ID,pulse*1
±20
A
Gate - Source voltage
VGSS
±10 V
Power dissipation
PD*2 1.25 W
PD*3 0.6 W
Junction temperature
Tj 150 ℃
Range of storage temperature
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.001
RT1A050ZP
lElectrical characteristic curves
Fig.9 Gate Threshold Voltage vs.
Junction Temperature
Datasheet
Fig.10 Forward Transfer Admittance vs.
Drain Current
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
6/11
20150730 - Rev.001
6 Page 12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ RT1A050ZP Schematic.PDF ] |
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