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RT1A050ZP Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RT1A050ZP
Beschreibung 1.5V Drive Pch MOSFET
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 12 Seiten
RT1A050ZP Datasheet, Funktion
RT1A050ZP
  Pch -12V -5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-12V
26mΩ
±5A
1.25W
lFeatures
1) Low on - resistance.
2) High power package
3) Low voltage drive(1.5V)
lOutline
TSST8
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
Marking
YH
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-12 V
Continuous drain current
ID ±5 A
Pulsed drain current
ID,pulse*1
±20
A
Gate - Source voltage
VGSS
±10 V
Power dissipation
PD*2 1.25 W
PD*3 0.6 W
Junction temperature
Tj 150
Range of storage temperature
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.001    






RT1A050ZP Datasheet, Funktion
RT1A050ZP
      
lElectrical characteristic curves
Fig.9 Gate Threshold Voltage vs.
      Junction Temperature
        
Datasheet
Fig.10 Forward Transfer Admittance vs.
     Drain Current
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
   Resistance vs. Gate Source Voltage
                                                                                          
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
6/11
20150730 - Rev.001

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