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PDF RT1A040ZP Data sheet ( Hoja de datos )
| Número de pieza | RT1A040ZP | |
| Descripción | 1.5V Drive Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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1.5V Drive Pch MOSFET
RT1A040ZP
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : YE
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit(piecies)
RT1A040ZP
Taping
TR
3000
zEquivalent circuit
(8) (7) (6)
(5)
∗2
∗1
(1) (2) (3) (4)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD
Tch
Range of Storage temerature
Tstg
∗1 Pw 10µs, Duty cycle 1%
∗2 When mounted on a ceramic board
Limits
−12
±10
±4
±16
−1
−16
1.25
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
100
Unit
V
V
A
A
A
A
W ∗2
°C
°C
Unit
°C / W
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.01 - Rev.A
1 page  
RT1A040ZP
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
Data Sheet
Pulse Width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
VG
VGS
Qgs
Qg
Qgd
Charge
FIg.2-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.01 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RT1A040ZP.PDF ] | |
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