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PDF ES6U2 Data sheet ( Hoja de datos )
| Número de pieza | ES6U2 | |
| Descripción | 1.5V Drive Nch+SBD MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ES6U2 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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1.5V Drive Nch+SBD MOSFET
ES6U2
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in Low VF schottky barrier diode.
zApplications
Switching
zDimensions (Unit : mm)
WEMT6
SOT-563T
(6) (5) (4)
(1) (2) (3)
Abbriviated symbol : U02
zInner circuit
(6) (5) (4)
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
ES6U2
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Channel temperature
Power dissipation
Tch
PD ∗2
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Limits
20
±10
±1.5
±3.0
0.5
3.0
150
0.7
∗2
∗1
(1) (2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3)Anode
(3) (4)Cathode
(5)Drain
(6)Drain
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60Hz 1cyc.
∗2 Mounted on ceramic board
Symbol
VRM
VR
IF
IFSM ∗1
Tj
PD ∗2
Limits
25
20
0.5
2.0
150
0.5
Unit
V
V
A
A
°C
W / ELEMENT
<MOSFET and Di>
Parameter
Power dissipation
Range of storage temperature
∗ Mounted on a ceramic board
Symbol
PD ∗
Tstg
Limits
0.8
−55 to +150
Unit
W / TOTAL
°C
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.12 - Rev.A
1 page  
ES6U2
Data Sheet
zMeasurement circuit
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Pulse Width
50%
VGS 10%
VDS
10%
90%
50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Fig.2-1 Gate Charge Measurement Circuit
Charge
FIg.2-2 Gate Charge Waveform
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.12 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ES6U2.PDF ] | |
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