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PDF RZQ045P01 Data sheet ( Hoja de datos )
| Número de pieza | RZQ045P01 | |
| Descripción | 1.5V Drive Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
1.5V Drive Pch MOSFET
RZQ045P01
RZQ045P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : YG
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZQ045P01
Taping
TR
3000
zEquivalent circuit
(6) (5)
(4)
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−12
±10
±4.5
±12
−1
−12
1.25
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ∗
Limits
100
Unit
°C / W
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
1/5
1 page  
Transistors
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.15 Switching Time Measurement Circuit
VGS
IG(Const)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.17 Gate Charge Measurement Circuit
RZQ045P01
Pulse Width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.16 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.18 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment .
Please consider to design ESD protection circuit.
5/5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RZQ045P01.PDF ] | |
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