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PDF US6M11 Data sheet ( Hoja de datos )
| Número de pieza | US6M11 | |
| Descripción | 1.5V Drive Nch+Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de US6M11 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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1.5V Drive Nch+Pch MOSFET
US6M11
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
SOT-363T
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) Low on-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M11
zApplications
Switching
zInner circuit
(6) (5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M11
Taping
TR
3000
∗1
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
20 −12 V
±10 ±10
V
±1.5 ±1.3
A
±6 ±5.2 A
0.5 −0.5 A
6
−5.2
A
1.0 W / TOTAL
0.7 W / ELEMENT
150 °C
−55 to +150
°C
∗2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/7
2009.07 - Rev.A
1 page  
US6M11
<Pch>
2 Ta=25°C
Pulsed
1.5
1
0.5
VGS= -10V
VGS= -4.5V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
VGS= -1.2V
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical output characteristics(Ⅰ)
Data Sheet
2 Ta=25°C
VGS= -4.5V
Pulsed
VGS= -2.5V
1.5 VGS= -1.8V
1 VGS= -1.5V
VGS= -1.2V
0.5 VGS= -1.0V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.2 Typical output characteristics(Ⅱ)
10 VDS= -6V
Pulsed
1
Ta= 125°C
Ta= 75°C
0.1 Ta= 25°C
Ta= - 25°C
0.01
0.001
0 0.5 1 1.5 2
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
10000
Ta=25°C
Pulsed
1000
10000
VGS= -4.5V
Pulsed
1000
10000
VGS= -2.5V
Pulsed
1000
100
10
0.01
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
0.1 1
10
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
100
10
0.01
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1 10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
100 Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10000
VGS= -1.8V
Pulsed
1000
10000
VGS= -1.5V
Pulsed
1000
Ta=125°C
100 Ta=75°C
Ta=25°C
Ta= -25°C
10
0.01 0.1 1 10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Ta=125°C
100 Ta=75°C
Ta=25°C
Ta= -25°C
10
0.01
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
10
VDS= -6V
Pulsed
1
0.1
0.01
0.1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1 10
DRAIN-CURRENT : -ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
5/7
2009.07 - Rev.A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet US6M11.PDF ] | |
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