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HY1707MF Schematic ( PDF Datasheet ) - HOOYI

Teilenummer HY1707MF
Beschreibung N-Channel Enhancement Mode MOSFET
Hersteller HOOYI
Logo HOOYI Logo 




Gesamt 16 Seiten
HY1707MF Datasheet, Funktion
HY1707P/M/B/I/MF/PS/PM
Features
70V/80A,
RDS(ON)= 6m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3S
DS
G
TO-263-2L
DS
G
TO-262-3L
Applications
Power Management for Inverter Systems.
DS
G
TO-220MF-3L
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P MB I
HY1707 HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
MF PS PM
HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
MF: TO-220MF-3L
PM: TO-3PS-3M
Date Code
YYXXX WW
M : TO-220FB-3S
I : TO-262-3L
PS: TO-3PS-3L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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151015






HY1707MF Datasheet, Funktion
HY1707P/M/B/I/MF/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.2
V = 10V
2.0
GS
I = 40A
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
R @T
ON
=25oC:
j
6m
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
160
100
T =175oC
10 j
1
T =25oC
j
0.1
0.0 0.3 0.6 0.9 1.2 1.5
VSD - Source-Drain Voltage (V)
Capacitance
10000
9000
Frequency=1MHz
8000
7000
6000
5000
Ciss
4000
3000
2000
1000 Crss
Coss
0
0 5 10 15 20 25 30 35 40
VDS - Drain - Source Voltage (V)
Gate Charge
10
V = 55V
9
DS
I = 40A
DS
8
7
6
5
4
3
2
1
0
0 12 24 36 48 60 72 84 96
QG - Gate Charge (nC)
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6 Page









HY1707MF pdf, datenblatt
HY1707P/M/B/I/MF/PS/PM
TO-220MF-3L
SYMBOL
E
E1
E2
A
A1
A2
A4
A5
c
D
Q
H1
e
P
L
L1
L2
P1
P2
P3
θ1
θ2
DEP
F1
F2
F3
F4
G
G1
G3
b1
b2
K1
R
MIN
9.86
9.76
9.26
4.50
2.34
0.30
2.63
0.45
15.47
3.06
12.58
2.81
7.55
1.40
0.95
3.30
3°
-
0.05
1.00
13.50
3.15
5.15
7.70
6.70
1.25
1.23
0.75
0.65
MM
NOM
10.16
10.04
9.46
4.70
2.54
0.56
2.76
1.00REF
0.50
15.87
9.40REF
6.70REF
2.54BSC
3.18
12.98
2.93
7.80
1.50
1.00
3.45
5°
45°
0.10
1.50
13.90
3.30
5.40
8.00
7.00
1.35
1.28
0.80
0.70
0.50REF
MAX
10.46
10.34
9.66
4.90
2.74
0.60
2.89
0.60
16.27
3.40
13.38
3.05
8.05
1.60
1.05
3.60
7°
-
0.15
2.00
14.30
3.45
5.65
8.30
7.30
1.45
1.38
0.90
0.75
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12 Page





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