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PDF IXBH16N170 Data sheet ( Hoja de datos )
| Número de pieza | IXBH16N170 | |
| Descripción | BIMOSFET Monolithic Bipolar MOS Transistor | |
| Fabricantes | IXYS | |
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High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH16N170
IXBT16N170
VCES =
IC90 =
VCE(sat) ≤
1700V
16A
3.3V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 22Ω
Clamped inductive load
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
1700
1700
V
V
± 20
± 30
V
V
40 A
16 A
120 A
ICM = 40
VCES ≤ 1350
250
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6g
4g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VVGCEE
=
=
0.8
0V
•
VCES
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 16A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
1700
V
3.0 5.5 V
TJ = 125°C
50 μA
2 mA
±100 nA
TJ = 125°C
3.3 V
3.2 V
TO-247 (IXBH)
G
CE
TO-268 (IXBT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z High blocking voltage
z International standard packages
z Low conduction losses
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z Uninterruptible power supplies (UPS)
z Laser generator
z Capacitor discharge circuit
z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS98657B(10/08)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
340
300
260
RG = 22Ω
VGE = 15V
VCE = 850V
I C = 32A
220
180
140
I C = 16A
100
60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
800
700 t r
td(on) - - - -
TJ = 125ºC, VGE = 15V
600 VCE = 850V
I C = 32A
500
180
160
140
120
400 100
300 80
200
I C = 16A
60
100 40
0 20
20 40 60 80 100 120 140 160
RG - Ohms
1200
1100
1000
900
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
t f td(off) - - - -
RG = 22Ω, VGE = 15V
VCE = 850V
360
340
320
300
800 280
700
TJ = 125ºC
260
600 240
500
400 TJ = 25ºC
220
200
300 180
200
8
160
10 12 14 16 18 20 22 24 26 28 30 32
IC - Amperes
IXBH16N170
IXBT16N170
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
350
300
250
RG = 22Ω
VGE = 15V
VCE = 850V
TJ = 125ºC
200
150
100 TJ = 25ºC
50
0
8 10 12 14 16 18 20 22 24 26 28 30 32
IC - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
900
t f td(off) - - - -
800 RG = 22Ω, VGE = 15V
VCE = 850V
700
I C = 16A
260
250
240
600 230
500 220
400 210
I C = 32A
300 200
200 190
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
1000
900
800
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 850V
1400
1200
1000
700
600 I C = 16A
800
600
500 400
400 I C = 32A 200
300 0
20 40 60 80 100 120 140 160
RG - Ohms
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: B_16N170(4A)10-06-08
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXBH16N170.PDF ] | |
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