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PDF AON3702 Data sheet ( Hoja de datos )
| Número de pieza | AON3702 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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General Description
SRFETTM AON3702 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
AON3702
30V N-Channel MOSFET
SRFET TM
Product Summary
VDS (V) = 30V
ID =11A (VGS = 10V)
RDS(ON) < 14.5mΩ (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 4.5V)
100% Rg Tested
Top View
DFN 3x3
Bottom View
Pin 1
Top View
18
27
3 6G
45
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
IDSM
IDM
Power Dissipation
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
11
9
60
3.1
2
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
30
65
20
Max
40
80
25
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AON3702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=24V
VDS=12V
1.0E-05
1.0E-06
0 50 100 150 200
Temperature (°C)
DYNAMIC PAFRigAurMe E12T: EDRioSde Reverse Leakage Current vs.
Junction Temperature
30
di/dt=800A/us
25
125ºC
12
10
20
15
Qrr
10
Irm
5
25ºC
125ºC
25ºC
8
6
4
2
00
0 5 10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
1
0.9 20A
0.8
0.7
0.6
0.5
10A
0.4 5A
0.3
0.2
0.1 IS=1A
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
12
10 di/dt=800A/us
8
trr
6
125ºC
25ºC
3
2.5
2
1.5
4
25ºC
1
S
2
0.5
125ºC
00
0 5 10 15 20 25 30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
25 10
20 8
Is=20A
125ºC
15 6
25ºC
10
125º
4
5 Qrr
25ºC
2
0 Irm
0
0 200 400 600 800 1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
15
125ºC
12
25ºC
9
6 25ºC
Is=20A
2.5
2
1.5
trr
1
3 125ºC
S 0.5
00
0 200 400 600 800 1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AON3702.PDF ] | |
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