(PDF) LN2306LT1G Datasheet - 30V N-Channel Enhancement-Mode MOSFET

Número de pieza	LN2306LT1G
Descripción	30V N-Channel Enhancement-Mode MOSFET
Fabricantes	LRC
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No Preview Available ! LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. ●FEATURES 1)VDS= 30V 2)RDS(ON), Vgs@10V, [email protected] = 38m Ω 3)RDS(ON), [email protected], [email protected] = 43m Ω 4)RDS(ON), [email protected], [email protected] = 62m Ω ●DEVICE MARKING AND ORDERING INFORMATION Device LN2306LT1G LN2306LT3G Marking N06 N06 Shipping 3000/Tape&Reel 10000/Tape&Reel LN2306LT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Pulsed Drain Current (Note1) Maximum Power Dissipation Operating and Storage Temperature Range Junction to Ambient Thermal Resistance(PCB mounted)(Note 2) Symbol Limits Unit VDSS 30 V VGS ±12 V ID 5.8 A IDM 30 A PD 1.4 W TJ, Tstg –55 to +150 °C RθJA 140 °C/W 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board July , 2015 Rev .B 1/4 1 page

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PDF LN2306LT1G Data sheet ( Hoja de datos )