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PDF LN4501LT3G Data sheet ( Hoja de datos )
| Número de pieza | LN4501LT3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 3.2 A, Single N−Channel,SOT−23
●APPLICATIONS
1) Load/Power Switch for Portables
2) Load/Power Switch for Computing
3) DC−DC Conversion
●FEATURES
1)Leading Planar Technology for Low Gate Charge / Fast Switching
2)2.5 V Rated for Low Voltage Gate Drive
3)SOT−23 Surface Mount for Small Footprint
4) we declare that the material of product compliant with
RoHS requirements and Halogen Free.
●DEVICE MARKING AND ORDERING INFORMATION
Device
LN4501LT1G
LN4501LT3G
Marking
N45
N45
Shipping
3000/Tape&Reel
10000/Tape&Reel
LN4501LT1G
3
1
2
SOT– 23 (TO–236AB)
3D
G
1
S
2
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
TA = 25°C
Current (Note 1) Steady State TA = 85°C
Steady State Power
Dissipation (Note 1) Steady State
Pulsed Drain Current (tp = 10 μs)
Symbol
VDSS
VGS
ID
PD
IDM
Limits
20
±12
3.2
2.4
1.25
10
Continuous Source Current (Body Diode)
IS
Operating and Storage Temperature Range TJ, Tstg
Maximum Temperature for Soldering
Purposes
TL
(1/8” from case for 10 s)
1.6
–55
to +150
260
Unit
V
V
A
A
W
A
A
°C
°C
●THERMAL CHARACTERISTICS
Parameter
Symbol Limits Unit
Junction−to−Ambient (Note 1)
RθJA 100 °C/W
Junction−to−Ambient (Note 2)
RθJA 300 °C/W
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
May,2015
Rev.A 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LN4501LT3G.PDF ] | |
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