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NP180N04TUK Schematic ( PDF Datasheet ) - Renesas

Teilenummer NP180N04TUK
Beschreibung MOS FIELD EFFECT TRANSISTOR
Hersteller Renesas
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Gesamt 8 Seiten
NP180N04TUK Datasheet, Funktion
NP180N04TUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0542EJ0100
Rev.1.00
Sep 23, 2011
Description
The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A )
Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V )
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP180N04TUK-E1-AY 1
NP180N04TUK-E2-AY 1
Lead Plating
Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263-7pin (MP-25ZT)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current 2
Repetitive Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±180
±720
348
1.8
175
55 to +175
72
518
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.43
83.3
°C/W
°C/W
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%
2. RG = 25 Ω, VGS = 20 Æ 0 V
R07DS0542EJ0100 Rev.1.00
Sep 23, 2011
Page 1 of 6






NP180N04TUK Datasheet, Funktion
NP180N04TUK
Package Drawing (Unit: mm)
TO-263-7pin (MP-25ZT) (Mass: 1.5 g TYP.)
10.0 ± 0.2
8.4 TYP.
8
4.45 ± 0.2
1.3 ± 0.2
0.025 to 0.25
Chapter Title
0.6 ± 0.15
1.27 TYP.
12 34567
0.5 ± 0.2
0 to 8°
0.25
10.0 ± 0.2
1. Gate
2, 3, 5, 6, 7. Source
4, 8. Fin (Drain)
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0542EJ0100 Rev.1.00
Sep 23, 2011
Page 6 of 6

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