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PDF NP110N055PUG Data sheet ( Hoja de datos )
| Número de pieza | NP110N055PUG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N055PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N055PUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP110N055PUG
TO-263 (MP-25ZP)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low Ciss: Ciss = 17100 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C)
PT2 288
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 66
Repetitive Avalanche Energy Note2
EAR 435
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16853EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
1 page  
NP110N055PUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
3
2
1
0
-100
VGS =10 V
ID = 55 A
Pulsed
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
tr
td(off)
td(on)
tf
VDD = 28 V
VGS = 10 V
RG = 0 Ω
1 10 100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
Pulsed
0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
50 VDD = 44 V
28 V
40 11 V
10
8
30 VGS 6
20 4
10
0
0
VDS 2
ID = 110 A
0
50 100 150 200 250 300
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/µs
VGS = 0 V
1 10 100
IF - Diode Forward Current - A
1000
Data Sheet D16853EJ1V0DS
5
5 Page | ||
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