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C30956EH Schematic ( PDF Datasheet ) - Excelitas

Teilenummer C30956EH
Beschreibung Long Wavelength Enhanced Silicon Avalanche Photodiodes
Hersteller Excelitas
Logo Excelitas Logo 




Gesamt 8 Seiten
C30956EH Datasheet, Funktion
DATASHEET
Photon Detection
C30954EH, C30955EH and C30956EH Series
Long Wavelength Enhanced Silicon Avalanche Photodiodes
for range finding, LIDAR, and YAG laser detection
ExcelitasC30954EH, C30955EH, and C30956EH are general purpose silicon
avalanche photodiodes made using a double-diffused "reach through"
structure. The design of these photodiodes is such that their long wave
response (i.e. > 900 nm) has been enhanced without introducing any
undesirable properties.
These APDs have quantum efficiency of up to 40% at 1060 nm. At the
same time, the diodes retain the low noise, low capacitance, and fast rise
and fall times characteristics.
Standard versions of these APDs are available in hermetically-sealed,
flat top glass TO-5 packages for the smaller area C30954EH and C30955EH,
and a TO-8 package for the larger area C30956EH.
To help simplify many design needs, these Si APDs are also available in
Excelitashigh-performance hybrid preamplifier module, C30659 Series, as
well as the preamplifier and Thermo-electric (TE) cooler incorporated
module, the LLAM Series.
Recognizing that different applications have different performance
requirements, Excelitas offers a wide range of customization options for
these APDs to meet your design challenges. TE cooler-packaged versions
are available on a custom basis. Operating and breakdown voltage
selection, dark current and NEP screening, custom device testing and
packaging are among the many application-specific solutions available.
www.excelitas.com
Page 1 of 8
Key Features
High quantum efficiency at
1060 nm
Fast response time
Wide operating temperature
range
Low capacitance
Hermetically-sealed packages
RoHS-compliant
Applications
Range finding
LIDAR
YAG laser detection
C30954-955-956EH series Rev.2011-12






C30956EH Datasheet, Funktion
C30954EH, C30955EH, C30956EH Series
Long Wavelength Enhanced Silicon Avalanche Photodiodes
Figure 9
Typical noise current vs.
Gain
Figure 10
Definition of Half-Angle
approximate field of view.
For incident radiation at
angles ≤ α/2, the
photosensitive surface is
totally illuminated.
.
For incident radiation at
angles > α/2, but ≤ α' /2,
the photosensitive surface
is partially illuminated.
Figure 11
Variation of Gain as a
Function of Difference
between Actual Applied
Operating Voltage and
Recommended Operating
Voltage - C30954EH
www.excelitas.com
Page 6 of 8
C30954-955-956EH series Rev.2011-12

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