Datenblatt-pdf.com


C30921SH Schematic ( PDF Datasheet ) - PerkinElmer Optoelectronics

Teilenummer C30921SH
Beschreibung Silicon Avalanche Photodiodes
Hersteller PerkinElmer Optoelectronics
Logo PerkinElmer Optoelectronics Logo 




Gesamt 13 Seiten
C30921SH Datasheet, Funktion
Silicon Avalanche Photodiodes
C30902 Series
High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications
Overview
PerkinElmer’s C30902EH avalanche
photodiode is fabricated with a double-
diffused “reach-through” structure. This
structure provides high responsivity
between 400 and 1000 nm as well as
extremely fast rise and fall times at all
wavelengths. The responsivity of the
device is independent of modulation
frequency up to about 800 MHz. The
detector chip is hermetically-sealed
behind a flat glass window in a modified
TO-18 package. The useful diameter of
the photosensitive surface is 0.5 mm.
PerkinElmer’s C30921EH is packaged in
a lightpipe TO-18 which allows efficient
coupling of light to the detector from
either a focused spot or an optical fiber
up to 0.25 mm in diameter.
The hermetically-sealed TO-18 package
allows fibers to be epoxied to the end of
the lightpipe to minimize signal losses
without fear of endangering detector
stability.
The C30902SH and C30921SH are
selected C30902EH and C30921EH
photodiodes having extremely low noise
and bulk dark-current. They are intended
for ultra-low light level applications
(optical power less than 1 pW) and can
be used in either their normal linear mode
(VR<VBR) at gains up to 250 or greater, or
as photon counters in the “Geiger” mode
(VR > VBR) where a single photoelectron
may trigger an avalanche pulse of about
108 carriers. In this mode, no amplifiers
are necessary and single-photon
detection probabilities of up to
approximately 50% are possible.
Photon-counting is also advantageous
where gating and coincidence techniques
are employed for signal retrieval.
Features and Benefits
High quantum efficiency of
77% typical @ 830 nm
C30902SH and C30921SH
can be operated in “Geiger”
mode
Hermetically sealed package
Low Noise at room
temperature
High responsivity – internal
avalanche gains in excess of
150
Spectral response range –
(10% points) 400 to 1000 nm
Time response – typically 0.5
ns
Wide operating temperature
range - -40°C to +70°C
RoHS-compliant
Applications
LIDAR
Laser range finder
Small-signal fluorescence
Photon counting
www.optoelectronics.perkinelmer.com






C30921SH Datasheet, Funktion
100
Figure 2
Typical quantum efficiency vs.
wavelength
-25degC
22degC
10
1
500 550 600 650 700 750 800 850 900 950 1000 1050 1100
Wavelength
1000
100
-40C
+22C
+60C
Figure 3
Typical responsivity @ 830 nm
vs. operating voltage
10
1
145 160 175 190 205 220 235 250 265
Bias Voltage - Volts
1000.000
100.000
C30902EH
C30902SH
Figure 4
Typical noise current vs. gain
10.000
10
100
Gain
www.optoelectronics.perkinelmer.com
1000
Silicon Avalanche Photodiodes
6

6 Page









C30921SH pdf, datenblatt
Active-Quenching Circuit
Until the C30902SH is recharged, the probability of detecting another incoming photoelectron
is relatively low. To avoid an excessive dead-time when operating at a large voltage above
VBR, an “actively quenched” circuit can be used. The circuit temporarily drops the bias voltage
for a fraction of a microsecond following the detection of an avalanche discharge. This delay
time allows all electrons and holes to be collected, including most of those temporarily
“trapped” at various impurity sites in the silicon. When the higher voltage is reapplied, there
are no electrons in the depletion region to trigger another avalanche or latch the diode.
Recharging can now be very rapid through a small load resistor. Alternatively, the bias voltage
can be maintained but the load resistor is replaced by a transistor which is kept off for a short
time after an avalanche, and then turned on for a period sufficient to recharge the photodiode.
Timing Resolution
For photon counting application, the time of the TTL triggered pulse after detecting a photon,
when plotted on a curve, take the FWHM averaged, is the timing resolution or time jitter. The
jitter at the half-voltage point is typically the same order of magnitude as the rise-time. For
timing purposes where it is important to have minimum jitter, the lowest possible threshold of
the rising pulse should be used.
After-Pulsing
An after-pulse is an avalanche breakdown pulse which follows a photon-generated pulse and
is induced by it. An after-pulse is usually caused by one of the approximately 108 carriers
which pass through the diode during an avalanche. This electron or hole is captured and
trapped at some impurity site in the silicon, as previously described. When this charge-carrier
is liberated, usually in less than 100ns but sometimes several milliseconds later, it may start
another avalanche. The probability of an after-pulse occurring more than one microsecond
later is typically less than 1% at 2 volts above VBR, using the circuit shown in Figure 14.
After-pulsing increases with bias voltage. If it is necessary to reduce after-pulses, it is
recommended that one keep VR-VBR low, use an actively-quenched circuit with a long delay-
line, or a passively-quenched circuit with a long RLC constant. Stray capacitances must also
be minimized. Electronic gating of the signal can be performed in certain situations. Should
after-pulses be a serious complication in a particular application, operation below VBR with a
good amplifier might be considered.
Dark Current
“S” versions have been selected to have a low dark-count rate. Cooling to -25°C can reduce
this by a factor of 50, since the dependence of dark-count rate on temperature is exponential.
The dark-count increases with voltage following the same curve as the Photoelectron
Detection Probability until a voltage where after-pulsing is responsible for a feedback
mechanism which dramatically increases the dark-count rate. This maximum voltage is circuit
dependant, and is not warranted other than the values listed on Table 1. In most cases, with a
delay time of 300 ns, the diode can be used effectively at VR up to VBR + 25V.
www.optoelectronics.perkinelmer.com
Silicon Avalanche Photodiodes
12

12 Page





SeitenGesamt 13 Seiten
PDF Download[ C30921SH Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
C30921S(C309xxx) Silicon Avalanche PhotodiodesPerkinElmer Optoelectronics
PerkinElmer Optoelectronics
C30921SHSilicon Avalanche PhotodiodesPerkinElmer Optoelectronics
PerkinElmer Optoelectronics
C30921SHHigh-speed solid state detectorsExcelitas
Excelitas

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche