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7D0N65F2 Schematic ( PDF Datasheet ) - KEC

Teilenummer 7D0N65F2
Beschreibung KHB7D0N65F2
Hersteller KEC
Logo KEC Logo 




Gesamt 7 Seiten
7D0N65F2 Datasheet, Funktion
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=650V, ID=7A
Drain-Source ON Resistance :
RDS(ON)=1.4 @VGS=10V
Qg(typ.)= 32nC
wwMwA.DXaItMaSUheMetR4UA.cToImNG (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB7D0N65F1 UNIT
KHB7D0N65P1
KHB7D0N65F2
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
650 V
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
7 7*
4.2 4.2*
28 28*
212
1.6
4.5
160 52
1.28 0.42
150
-55 150
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
0.78
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2.4 /W
- /W
62.5 /W
D
G
2007. 5. 10
S
Revision No : 0
KHB7D0N65P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB7D0N65P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB7D0N65F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB7D0N65F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7






7D0N65F2 Datasheet, Funktion
KHB7D0N65P1/F1/F2
Fig14. Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
www.DataSheet4U.com
1.0 mA
VGS
ID
VDS
Qgs
Qgd
Qg
Fig15. Single Pulsed Avalanche Energy
50V
25
10 V VGS
BVDSS
L
IAS
VDS
VDD
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig16. Resistive Load Switching
50V
25
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
2007. 5. 10
Revision No : 0
6/7

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