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Teilenummer | 7NM60 |
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Beschreibung | 600V N-CHANNEL POWER MOSFET | |
Hersteller | UNISONIC TECHNOLOGIES | |
Logo | ||
Gesamt 7 Seiten UNISONIC TECHNOLOGIES CO., LTD
7NM60
Preliminary
7.4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7NM60 is a high voltage super junction MOSFET and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
* RDS(ON) < 0.9Ω @ VGS = 10V, ID = 3.7A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM60L-TF1-T
7NM60G-TF1-T
7NM60L-TN3-R
7NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R209-044.a
7NM60
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
RL
D.U.T.
VDD
Switching Test Circuit
Power MOSFET
Switching Waveforms
Same
12V
50kΩ
0.2µF
0.3µF
Type as
D.U.T.
VDS
VGS
3mA
DUT
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R209-044.a
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ 7NM60 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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