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Número de pieza | CEF35P10 | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEF35P10 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEP35P10/CEB35P10
CEF35P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -32A, RDS(ON) =76mΩ @VGS = -10V.
RDS(ON) =92mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -100
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -32
IDM -128
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
125
0.83
Single Pulsed Avalanche Energy e
EAS 450
Single Pulsed Avalanche Current e
IAS 30
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.2
62.5
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2009.July
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEF35P10.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEF35P10 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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