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PDF MCM21L14 Data sheet ( Hoja de datos )
| Número de pieza | MCM21L14 | |
| Descripción | 4096-Bit Static RAM | |
| Fabricantes | Motorola Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MCM21L14 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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® MOTOROLA
MCM2114
MCM21L14
4096-BIT STATIC RANDOM ACCESS MEMORY
The MCM2114 is a 4096-bit random access memory fabricated
with high density, high reliability N-channel silicon-gate technology.
For ease of use, the device operates from a single power supply,
is directly compatible with TTL and DTL, and requires no clocks
or refreshing because of fully static operation. Data access is par-
ticularly simple, since address setup times are not required. The
output data has the same polarity as the input data.
The MCM2114 is designed for memory applications where
simple interfacing is the design objective. The MCM2114 is as-
sembled in 18-pin dual-in-line packages with the industry standard
pin-out. A separate chip select (8) lead allows easy selection of
an individual package when. the three-state outputs are 0 R-tied.
The MCM2114 series has a maximum current of 100 mAo Low
power versions (i.e., MCM21 L14 series) are available with a maxi-
mum current of only 70 mAo
• 1024 Words by 4-Bit Organization
• Industry Standard 18-Pin Configuration
• Single +5 Volt Supply
• No Clock or Timing Strobe Required
• Fully Static: Cycle Time = Access Time
• Fully TTL/DTL Compatible
• Common Data Input and Output
• Three-State Outputs for OR-Ties
• Low Power Version Available
MAXIMUM ACCESS TIME/MINIMUM CYCLE TIME
MCM2114-20
MCM21L14-20
MCM2114-25
MCM21 L14-25
200 ns
250 ns
MCM2114-30
MCM21 L 14-30
MCM2114-45
MCM21L14-45
15
A9
A4
A5
1
A6
17
A7
16
A8
14
/101
13
1102
Row
Select
Memory Array
64 Row
, 64 Columns
300 ns
450 ns
Vec = Pin 18
Vss=Pin9
BLOCK DIAGRAM
MOS
IN-CHANNEL, SILICON-GATE)
4096·BIT STATIC
RANDOM ACCESS
MEMORY
II
~~ ~ ~ ~ p~sncij PSUFFIX
PACKAGE
CASE 707
)~'X
CERAMIC PACKAGE
CASE 680
PIN ASSIGNMENT
'r~l"A6
A5 2
Vcc
17 A7
A4 3
16 A8
A3 4
'LAO
Al
A2
S
15 A9
14 1/01
13 1/02
12 1/03
11 1/04
VSS 9
-----.J 10 IN
PIN NAMES
AO-A9
W
S
1101-1/04
Vee
VSS
Address Input
Write Enable
Chip Select
Data InputlOutput
Power (+5 V)
Ground
2-3
1 page  
MCM2114, MCM21 L14
NORMALIZED ACCESS TIME versus TEMPERATURE
1.0
! 0.95
- :E
;::
§en
0.90
«
CI
~ 0.85
«
~
Z 0.80
:J.
/
/"
....v
....V
V
/
/
--
- ----t-o
0.7 5
o
20 40
TA, TEMPERATURE (DC)
60
80
TYPICAL ACCESS TIME versus TEMPERATURE
v170
160
/
;:E:: / v
~ 150
V
« ./
:J.
140 ~
L
V
/
130
20
40 60 80
TA, TEMPERATURE (DC)
90
•
PIN 1
D
1023 l1li(:
1007
MCM2114/MCM21 L14 BIT MAP
1008 1023 l1li(:
1007
1008 1023 III:
1007
1008 1023 lilt
1007
PIN 18
oVee
1008
1/°3 (PIN NO. 12)
1/°4 (PIN NO.l1)
1/° 1 (PIN NO. 14)
1/°2 (PIN NO. 13)
15 lilt
16
~ 15 III:
16
0 15 l1li(:
16
0 15 III:
16
0
To determine the precise location on the die of a word in memory, reassign address numbers to the address pins as
in the table below. The bit locations can then be determined directly from the bit map.
PIN NUMBER
2
3
4
5
REASSIGNED
ADDRESS NUMBER
A6
A5
A4
A3
AD
PIN NUMBER
6
7
15
16
17
REASSIGNED
ADDRE-SS NUMBER
Al
A2
AS
AS
A7
2-7
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MCM21L14.PDF ] | |
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