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PDF ME20N10-G Data sheet ( Hoja de datos )
| Número de pieza | ME20N10-G | |
| Descripción | N-Channel 100V (D-S) MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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ME20N10/ME20N10-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME20N10 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits ,
and low in-line power loss are needed in a very small outline surface
mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦78mΩ@VGS=10V
● RDS(ON)≦98mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
(TO-252-3L)
Top View
e Ordering Information: ME20N10 (Pb-free)
ME20N10-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TC=25℃
TC=70℃
Pulsed Drain Current
Maximum Power Dissipation*
TC=25℃
TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJC
Maximum Ratings
100
±20
19
15
76
45
29
-55 to 150
2.8
Unit
V
V
A
A
W
℃
℃/W
Jul, 2012-Ver1.4
01
1 page  
N- Channel 100V (D-S) MOSFET
ME20N10/ME20N10-G
TO252-3L Package Outline
SYMBOL
A
B
C
D
D1
E
E1
L1
L2
L3
H
P
MIN
2.10
0.40
0.40
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
2.30 BSC
MAX
2.50
0.90
0.90
6.30
2.90
6.75
5.50
1.80
1.10
0.20
10.40
Jul, 2012-Ver1.4
05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ME20N10-G.PDF ] | |
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