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Teilenummer | ME20N10 |
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Beschreibung | N-Channel 100V (D-S) MOSFET | |
Hersteller | Matsuki | |
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Gesamt 5 Seiten ME20N10/ME20N10-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME20N10 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits ,
and low in-line power loss are needed in a very small outline surface
mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦78mΩ@VGS=10V
● RDS(ON)≦98mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
(TO-252-3L)
Top View
e Ordering Information: ME20N10 (Pb-free)
ME20N10-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TC=25℃
TC=70℃
Pulsed Drain Current
Maximum Power Dissipation*
TC=25℃
TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJC
Maximum Ratings
100
±20
19
15
76
45
29
-55 to 150
2.8
Unit
V
V
A
A
W
℃
℃/W
Jul, 2012-Ver1.4
01
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ ME20N10 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ME20N10 | N-Channel 100V (D-S) MOSFET | Matsuki |
ME20N10-G | N-Channel 100V (D-S) MOSFET | Matsuki |
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