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CEA6200 Schematic ( PDF Datasheet ) - CET

Teilenummer CEA6200
Beschreibung N-Channel Enhancement Mode Field Effect Transistor
Hersteller CET
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Gesamt 4 Seiten
CEA6200 Datasheet, Funktion
CEA6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 1.8A, RDS(ON) = 250m@VGS = 10V.
RDS(ON) = 330m@VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D
D
SOT-89
S
D
G
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 1.8
IDM 7.2
Maximum Power Dissipation
PD 1.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.June
http://www.cet-mos.com





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