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Teilenummer | CEA6200 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEA6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V.
RDS(ON) = 330mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D
D
SOT-89
S
D
G
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 1.8
IDM 7.2
Maximum Power Dissipation
PD 1.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.June
http://www.cet-mos.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEA6200 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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