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PDF SiHP22N60S Data sheet ( Hoja de datos )
| Número de pieza | SiHP22N60S | |
| Descripción | S Series Power MOSFET | |
| Fabricantes | Vishay | |
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SiHP22N60S
Vishay Siliconix
S Series Power MOSFET
PRODUCT SUMMARY
VDS at TJ max. (V)
RDS(on) max. at 25 °C (Ω)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
98
17
25
Single
0.190
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Generation one
• High EAR capability
• Lower figure-of-merit Ron x Qg
• 100 % avalanche tested
• Ultra low Ron
• dV/dt ruggedness
• Ultra low gate charge (Qg)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• PFC power supply stages
• Hard switching topologies
• Solar inverters
• UPS
• Motor control
• Lighting
• Server telecom
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
SiHP22N60S-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
TO-220AB
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Repetitive Avalanche Energy a
Maximum Power Dissipation
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TO-220AB
TJ = 125 °C
EAS
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 30
22
13
65
2
690
25
250
37
5.3
-55 to +150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
S15-0982-Rev. F, 27-Apr-15
1
Document Number: 91373
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 12 - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 13 - Switching Time Waveforms
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- V DD
Fig. 14 - Unclamped Inductive Test Circuit
VDS
tp
VDD
VDS
IAS
Fig. 15 - Unclamped Inductive Waveforms
SiHP22N60S
Vishay Siliconix
VGS
QGS
VG
QG
QGD
Charge
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
S15-0982-Rev. F, 27-Apr-15
5
Document Number: 91373
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHP22N60S.PDF ] | |
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