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Teilenummer | CEB15A03 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP15A03/CEB15A03
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 190A, RDS(ON) = 4.5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 190
IDM 760
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
200
1.3
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
405
52
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2010.June
http://www.cet-mos.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEB15A03 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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