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PDF SP8M51 Data sheet ( Hoja de datos )
| Número de pieza | SP8M51 | |
| Descripción | 4V Drive Nch + Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
4V Drive Nch + Pch MOSFET
SP8M51
Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Dimensions (Unit : mm)
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
(8) (5)
(1) (4)
Application
Switching
Inner circuit
Packaging specifications
(8) (7) (6) (5)
Type
SP8M51
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta = 25C)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1 ∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
Limits
Tr1 : N-ch Tr2 : P-ch
Unit
VDSS
VGSS
ID
IDP *1
Is
Isp *1
100
±20
3.0
12
1.0
12
100
±20
2.5
10
1.0
10
V
V
A
A
A
A
PD *2
2.0 W / TOTAL
1.4 W / ELEMENT
Tch 150
Tstg 55 to 150
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.02 - Rev.A
1 page  
SP8M51
1000
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS= 4.0V
Pulsed
Data Sheet
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
VDS= 10V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
10
VGS=0V
Pulsed
10
1
Ta=125°C
0.1 Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0
0.5 1
SOURCE-DRAIN VOLTAGE : VSD [V]
1.5
10000
1000
Fig.11 Switching Characteristics
td(off)
tf
Ta=25°C
VDD=50V
VGS=10V
RG=10Ω
Pulsed
100
td(on)
10
1
0.01
tr
0.1 1
DRAIN-CURRENT : ID[A]
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1 1
DRAIN-CURRENT : ID[A]
10
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
300
250
ID= 1.5A
Ta=25°C
Pulsed
ID= 3.0A
200
150
100
50
0
0
2468
GATE-SOURCE VOLTAGE : VGS[V]
10
Fig.12 Dynamic Input Characteristics
10
8
6
4
Ta=25°C
2 VDD= 50V
ID= 3.0A
RG=10Ω
Pulsed
0
0 2 4 6 8 10 12 14 16 18 20
TOTAL GATE CHARGE : Qg [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/10
2011.02 - Rev.A
5 Page 
Notes
Notice
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SP8M51.PDF ] | |
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