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PDF K4078 Data sheet ( Hoja de datos )
| Número de pieza | K4078 | |
| Descripción | MOSFET ( Transistor ) - 2SK4078 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4078
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4078-ZK-E1-AY Note
2SK4078-ZK-E2-AY Note
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
• Low on-state resistance
RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A)
• Low input capacitance
Ciss = 2300 pF TYP.
• Logic level drive type
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±50
±150
Total Power Dissipation (TC = 25°C)
PT1
45
Total Power Dissipation (TA = 25°C)
PT2
1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 23
EAS 52
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.77
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18885EJ1V0DS00 (1st edition)
Date Published July 2007 NS
Printed in Japan
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
16
VGS = 4.5 V, ID = 13 A
12
8
4
0
-100
10 V, 25 A
Pulsed
-50 0 50 100 150
Tch - Channel Temperature - °C
200
SWITCHING CHARACTERISTICS
100
td(off)
tr
td(on)
10
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
10
ID - Drain Current - A
100
1000
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
10 0 V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK4078
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 12
35
VDD = 32 V
30 20 V
8V
25
9
20 6
VGS
15
10 3
VDS
5 ID = 50 A
00
0 10 20 30 40 50
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet D18885EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K4078.PDF ] | |
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