|
|
Teilenummer | PL2302GD |
|
Beschreibung | N-Channel High Density Trench MOSFET | |
Hersteller | PULAN TECHNOLOGY | |
Logo | ||
Gesamt 4 Seiten PULAN TECHNOLSOeGmY CiOc.,oLnIMdITuEcDtor CO.,LTD
P L2302GD
PULAN
18948314942 QQ:1094642907
N-Channel High Density Trench MOSFET
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
3.0 65 @ VGS = 4.5V
20V
2.0 90 @ VGS = 2.5V
FEATURES
●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
SOT-23-3
D
D
S
G
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C
-Pulse b
a
Drain-Source Diode Forward Current
Maximum Power Dissipation a
TA=25°C
TA=75°C
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ,TSTG
Limit
20
±12
3
9
1
1.25
0.75
- 55 to 150
Unit
V
V
A
A
A
W
°C
THERMAL CHARACTERISTICS
a
Thermal Resistance,Junction-to-Ambient
Note
a. Surface Mounted on FR4 Board , t ≤ 10sec .
b. Pulse width limited by maximum junction temperature.
RthJA
1
100 °C/W
| ||
Seiten | Gesamt 4 Seiten | |
PDF Download | [ PL2302GD Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
PL2302GD | N-Channel High Density Trench MOSFET | PULAN TECHNOLOGY |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |