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PL2302GD Schematic ( PDF Datasheet ) - PULAN TECHNOLOGY

Teilenummer PL2302GD
Beschreibung N-Channel High Density Trench MOSFET
Hersteller PULAN TECHNOLOGY
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Gesamt 4 Seiten
PL2302GD Datasheet, Funktion
PULAN TECHNOLSOeGmY CiOc.,oLnIMdITuEcDtor CO.,LTD
P L2302GD
PULAN
18948314942 QQ:1094642907
N-Channel High Density Trench MOSFET
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
3.0 65 @ VGS = 4.5V
20V
2.0 90 @ VGS = 2.5V
FEATURES
Super high dense cell trench design for low RDS(on).
Rugged and reliable.
Surface Mount package.
SOT-23-3
D
D
S
G
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C
-Pulse b
a
Drain-Source Diode Forward Current
Maximum Power Dissipation a
TA=25°C
TA=75°C
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ,TSTG
Limit
20
±12
3
9
1
1.25
0.75
- 55 to 150
Unit
V
V
A
A
A
W
°C
THERMAL CHARACTERISTICS
a
Thermal Resistance,Junction-to-Ambient
Note
a. Surface Mounted on FR4 Board , t 10sec .
b. Pulse width limited by maximum junction temperature.
RthJA
1
100 °C/W





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