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PDF A1214 Data sheet ( Hoja de datos )
| Número de pieza | A1214 | |
| Descripción | PNP Transistor - 2SA1214 | |
| Fabricantes | New Jersey Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1214 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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JZIS.EU ^smi-L-onauctoi iJ-* 10ducts.,Una.
C/ u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973)376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1214
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEo= -50V (Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
APPLICATIONS
• Desinged for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-50 V
Vgeo Emitter-Base Voltage
-5 V
Ic Collector Current-Continuous
Collector Power Dissipation
@ Ta=25°C
PC
Total Power Dissipation
@ TC=25°C
Tj Junction Temperature
-2 A
1.5
W
25
150 •c
Tstg Storage Temperature Range
-55-150 •c
PIN 1. EMITTER
2.COLLECTOR
3. BASE
TO-126 package
lre--B~-
rQ
£i£r T
\
H-
V
fT "
1D-»
»-^t G *•q—
_»j = (*-
I
t•
A
K ~~* r*-J
*-R
f
D£ji * *
^•^MMH
23
min
DIM MIN MAX
A 10.70 10.95
B 7.70 7.90
C 2.60 2.30
D 0.66 0.86
F 3.10 3.30
G 4,48 4.58
H 2.00 2.20
J 1.35 1.55
K 15.30 16.30
0 3.70 3.»0
R 0.40 0.60
V 1.17 1.37
NJ Semi-Conductors reserves the right to change test conditions,parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of"going
to press. However. NJ Semi-Conductors assumes no responsibilitylor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet A1214.PDF ] | |
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