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Número de pieza | MIG20J503H | |
Descripción | Intelligent Power Module | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MIG20J503H (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! TOSHIBA Intelligent Power Module
MIG20J503H
MIG20J503H
MIG20J503H is an intelligent power module for three-phase
inverter system. The 4th generation low saturation voltage
trench gate IGBT and FRD are connected to a three-phase full
bridge type, and IC by the original high-voltage SOI
(silicon-on-insulator) process drives these directly in response to a
PWM signal. Moreover, since high-voltage level-shifter is built in
high-voltage IC, while being able to perform a direct drive
without the interface with which the upper arm IGBT is
insulated, the drive power supply of an upper arm can be driven
with a bootstrap system, and the simplification of a system is
possible. Furthermore, each lower arm emitter terminal has been
independent so that detection can perform current detection at
the time of vector control by current detection resistance of a
Weight: 18 g (typ.)
lower arm. The protection function builds in Under Voltage
Protection, Short Circuit Protection, and Over Temperature Protection. Original high thermal conduction resin is
adopted as a package, and low heat resistance is realized.
Features
• The 4th generation trench gate thin wafer NPT IGBT is adopted.
• FRD is built in.
• The level shift circuit by high-voltage IC is built in.
• The simplification of a high side driver power supply is possible by the bootstrap system.
• Short circuit protection, over temperature protection, and the power supply under voltage protection function
are built in.
• Short circuit protection and over temperature protection state are outputted.
• The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at
the time of vector control.
• Low thermal resistance by adoption of original high thermal conduction resin.
Since this product is MOS structure, it should be careful of static electricity in the case of handling.
1 2003-10-30
1 page MIG20J503H
Truth Table
Protection Circuit Detection State
High Side
Under
Voltage
Low Side
Under
Voltage
Short Circuit
Over
Temperature
Un-Detecting Un-Detecting Un-Detecting Un-Detecting
Input
IN (X) High IN (X) Low
Side Arm Side Arm
HH
Un-Detecting Un-Detecting Un-Detecting Un-Detecting
H
L
Un-Detecting Un-Detecting Un-Detecting Un-Detecting
L
H
Un-Detecting Un-Detecting Un-Detecting Un-Detecting
L
L
Detecting Un-Detecting Un-Detecting Un-Detecting
H
H
Detecting Un-Detecting Un-Detecting Un-Detecting
H
L
Detecting Un-Detecting Un-Detecting Un-Detecting
L
H
Detecting Un-Detecting Un-Detecting Un-Detecting
L
L
Un-Detecting Detecting Un-Detecting Un-Detecting
H
H
Un-Detecting Detecting Un-Detecting Un-Detecting
H
L
Un-Detecting Detecting Un-Detecting Un-Detecting
L
H
Un-Detecting Detecting Un-Detecting Un-Detecting
L
L
Detecting Detecting Un-Detecting Un-Detecting
H
H
Detecting Detecting Un-Detecting Un-Detecting
H
L
Detecting Detecting Un-Detecting Un-Detecting
L
H
Detecting Detecting Un-Detecting Un-Detecting
L
L
Un-Detecting Un-Detecting Detecting Un-Detecting
H
H
Un-Detecting Un-Detecting Detecting Un-Detecting
H
L
Un-Detecting Un-Detecting Detecting Un-Detecting
L
H
Un-Detecting Un-Detecting Detecting Un-Detecting
L
L
Un-Detecting Un-Detecting Un-Detecting Detecting
H
H
Un-Detecting Un-Detecting Un-Detecting Detecting
H
L
Un-Detecting Un-Detecting Un-Detecting Detecting
L
H
Un-Detecting Un-Detecting Un-Detecting Detecting
L
L
Un-Detecting Un-Detecting Detecting Detecting
H
H
Un-Detecting Un-Detecting Detecting Detecting
H
L
Un-Detecting Un-Detecting Detecting Detecting
L
H
Un-Detecting Un-Detecting Detecting Detecting
L
L
IGBT State
High Side
Arm
Low Side
Arm
OFF
OFF
ON
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
Fault Output
FO (X)
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
ON
ON
ON
ON
ON
ON
ON
ON
ON
ON
ON
ON
• The above has indicated a part for single arm.
• There is no relevance of operation between arms.
• When the input of a high side arm and a low side arm is simultaneously set to “L”, IGBT of a high side arm and
a low side arm turns off.
• FO (X) terminal is turned on in the meantime at the same time, as for the output of Phase which detected the
load short circuit state, it will maintain the OFF between 10 ms, if a Short Current Protection detects a Short
Current state. Although an incoming signal is reset by an upper arm and a lower arm being simultaneously set
to “H” in the back in this state, OFF of an output and FO (X) are maintained between 10 ms. Although FO (X) is
turned off when FO (X) terminal for 10 ms will not be in the simultaneous “H” state of an upper arm and a
lower arm in during ON time, an output maintains OFF. This release is made by an upper arm and a lower arm
being simultaneously set to “H”.
(Short current protection is a non-repetition. When FO (X) turns on, please turn off the input of all phase.)
• If an Over Temperature Protection circuit detects an Over Temperature state, while the output of Phase which
detected the Over Temperature Protection state is turned off, FO (X) terminal turns it on. This state will return
operation, if temperature falls to Over Temperature Protection detection return temperature (over temperature
protection temperature-over temperature protection hysteresis).
5 2003-10-30
5 Page Low Side Arm
Switching Time – IC
10
Common emitter
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 25°C
1
toff
ton
tf
0.1
tr
0.01
0.1
1 10
Collector current IC (A)
High Side Arm
10
Common cathode
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 25°C
1
trr, Irr – IF
Irr
100
0.1 trr
MIG20J503H
Low Side Arm
Switching Time – IC
10
Common emitter
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 100°C
1
toff
ton
tf
0.1
tr
0.01
0.1
1 10
Collector current IC (A)
High Side Arm
10
Common cathode
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 100°C
1
trr, Irr – IF
Irr
100
trr
0.1
0.01
0.1
1 10
Forward current IF (A)
Low Side Arm
10
Common cathode
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 25°C
1
trr, Irr – IF
Irr
0.1
trr
100
0.01
0.1
1 10
Forward current IF (A)
100
0.01
0.1
1 10
Forward current IF (A)
Low Side Arm
10
Common cathode
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 100°C
1
trr, Irr – IF
Irr
0.1 trr
100
0.01
0.1
1 10
Forward current IF (A)
100
11 2003-10-30
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet MIG20J503H.PDF ] |
Número de pieza | Descripción | Fabricantes |
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