PDF NCP1032 Data sheet ( Hoja de datos )

Número de pieza	NCP1032
Descripción	Low Power PWM Controller
Fabricantes	ON Semiconductor
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No Preview Available ! NCP1032 Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for Telecom Systems The NCP1032 is a miniature high−voltage monolithic switching converter with on−chip power switch and startup circuits. It incorporates in a single IC all the active power control logic and protection circuitry required to implement, with minimal external components several switching regulator applications, such as a secondary side bias supply or a low power DC−DC converter. This converter is ideally suited for 24 V and 48 V telecom and medical isolated power supply applications. The NCP1032 can be configured in any single−ended topology such as forward or flyback converter. The NCP1032 is targeted for applications requiring up to 3 W. The internal error amplifier allows the NCP1032 to be easily configured for secondary or primary side regulation operation in isolated and non−isolated configurations. The fixed frequency oscillator is optimized for operation up to 1 MHz and is capable of external frequency synchronization, providing additional design flexibility. In addition, the NCP1032 incorporates undervoltage and overvoltage line detectors, programmable cycle−by−cycle current limit, internal soft−start, and thermal shutdown to protect the controller under fault conditions. Features • On Chip High 200 V Power Switch Circuit and Startup Circuit • Internal Startup Regulator with Auxiliary Winding Override • Programmable Oscillator Frequency Operation up to 1 MHz • External Frequency Synchronization Capability • Frequency Fold−down Under Fault Conditions • Trimmed ± 2% Internal Reference • Programmable Cycle−by−Cycle Current Limit • Internal Soft−Start • Active Leading Edge Blanking Circuit • Line Under and Over Voltage Protection • Over Temperature Protection • These are Pb−Free Devices Typical Applications • POE (Power Over Ethernet)/PD. Refer to Application Note AND8247 • Secondary Side Bias Supply for Isolated DC−DC Converters • Stand Alone Low Power DC−DC Converter • Low Power Bias Supply • Low Power Boost Converter • Medical Isolated Power Supplies • Bias Supply for Telecom Systems. Refer to App Note AND8119/D http://onsemi.com MARKING DIAGRAMS WDFN8 1032x 1 MN SUFFIX CASE 511BH ALYW G G 1032 = Specific Device Marking x = A or B A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS GND ÇCT ÇVFB ÇÇCOMP ÇÇÇÇÇÇÇÇGND VDRAIN VCC UV/OV CL WDFN8 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 20 of this data sheet. © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 2 1 Publication Order Number: NCP1032/D 1 page NCP1032 Table 3. ELECTRICAL CHARACTERISTICS (For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, VDRAIN = 48 V, VCC = 12 V, unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit CURRENT LIMIT AND PWM COMPARATOR CLIM_MAX Max Current Limit Threshold CL pin Floating, TJ = 25°C, (di/dt = 0.5 A/ms) mA 420 512 600 CLIM_MIN Min Current Limit Threshold RCL = 20 kW, TJ = 25°C, (di/dt = 0.1 A/ms) mA − 57 − TPLH Propagation Delay from Current Limit Detection to the Drain OFF State (Note 6) − 100 − ns TON_MIN Min On Time Pulse Width Tss Soft−Start Duration LINE UNDER/OVERVOLTAGE PROTECTIONS FSW = 300 kHz (Note 6) (Note 6) − 240 − ns − 2.0 − ms Vuv VUV_hys Iuv Undervoltage Lockout Threshold Undervoltage Lockout Hysteresis Input Bias Current VOV Overvoltage Lockout Threshold Vov_hys Overvoltage Lockout Hysteresis TEMPERATURE MANAGEMENT VFB = VCOMP, Vin decreasing VFB = 2.3 V VFB = VCOMP, Vin increasing (Note 7) 0.95 1.067 − 70 −0 2.3 2.41 − 158 1.18 − 1 2.5 − V mV mA V mV TSD Thermal Shutdown (Note 6) 175 °C Hysteresis in Shutdown (Note 6) 20 °C INTERNAL OSCILLATOR fOSC1 Oscillation Frequency, 300 kHz CT = 560 pF (Note 9) TJ = 25°C TJ = −40°C to 125°C kHz 275 300 325 270 − 335 fOSC2 Oscillation Frequency, 960 kHz CT = 100 pF, TJ = 25°C − 960 − kHz ICT_C Timing Charge Current VCT = 3.25 V − 172 − mA ICT_D Timing Discharge Current VCT = 3.25 V 517 mA VR_pk Oscillator Ramp Peak Voltage − 3.492 − V VR_VLY Oscillator Ramp Valley − 2.992 − V DCMAx Maximum Duty Cycle 70 76.5 80 % Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Guaranteed by design and characterized 7. The OV/UV option is disabled on the NCP1032B version 8. Oscillator frequency can be externally synchronized to the maximum frequency of the device http://onsemi.com 5 5 Page CT Ramp CT Charge Signal PWM Comparator Output PWM Latch Output Power Switch Circuit Gate Drive Leading Edge Blanking Output VCC(on) VCC(off) VCC(reset) NCP1032 Current Limit Propagation Delay Current Limit Threshold Normal PWM Operating Range Output Overload Figure 33. Pulse Width Modulation Timing Diagram 0V ISTART 0 mA 3.0 V VUV 0V 2.5 V VFB 0V VDRAIN 0V Startup Dynamic Mode Self Supply Normal Operation Output Overload Figure 34. Auxiliary Winding Operation with Output Overload Timing Diagram http://onsemi.com 11 11 Page

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