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Teilenummer | KGT25N120NDA |
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Beschreibung | NPT IGBT | |
Hersteller | KEC | |
Logo | ||
Gesamt 8 Seiten SEMICONDUCTOR
TECHNICAL DATA
KGT25N120NDA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
High speed switching
High system efficiency
Soft current turn-off waveforms
Extremely enhanced avalanche capability
A
N
O
D
E
d
PP
123
QB
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
VCES
1200
Gate-Emitter Voltage
VGES
20
Collector Current
@Tc=25
@Tc=100
50
IC
25
Pulsed Collector Current
ICM*
90
Diode Continuous Forward Current @Tc=100
IF 25
Diode Maximum Forward Current
IFM 150
Maximum Power Dissipation
@Tc=25
@Tc=100
310
PD
125
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
V
V
A
A
A
A
A
W
W
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R JC
R JC
R JA
MAX.
0.4
2.8
40
UNIT
/W
/W
/W
TO-3P(N)-E
C
G
E
E
C
G
2009. 10. 29
Revision No : 0
1/8
KGT25N120NDA
Typical Performance Characteristics (Continued)
Fig 13. Gate Charge Characteristics
16
Common Emitter
14 RL = 24Ω
TC = 25 C
12
Vcc = 200V
10
600V
400V
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Gate Charge Qg (nC)
Fig 15. Turn-Off SOA
100
Fig 14. SOA Characteristics
100.00
10.00
50µs
200µs
1.00
0.10
0.01
Single nonrepetitive pulse
Tc= 25 C
Curves must be derated
linearly with increase
in temperature
0.1 1
10
1ms
10ms
DC
Operation
100 1000
Collector-Emitter Voltage VCE (V)
10
Turn-Off Safe Operating Area
VGE = 15V, TC =125 C
1
1 10 100 1000
Collector-Emitter Voltage VCE (V)
10.000
Fig 16. Transient Thermal Impedance of IGBT
2009. 10. 29
1.000
0.100
0.5
0.2
0.1
0.05
0.010
0.02
0.01
0.001
1E-5
Single Pluse
1E-4
1E-3
1E-2
PDM
t1
t2
1. Duty factor D=t1/t2
2. Peak Tj = Pdm Zthjc + TC
1E-1
1E+00
1E+01
Rectangular Pulse Duration (sec)
Revision No : 0
6/8
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ KGT25N120NDA Schematic.PDF ] |
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