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G23N60UFD Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer G23N60UFD
Beschreibung SGF23N60UFD
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
G23N60UFD Datasheet, Funktion
SGF23N60UFD
Ultra-Fast IGBT
June 2001
IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
• High Input Impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
GC E
TTOO--33PPFF
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGF23N60UFD
600
± 20
23
12
92
12
92
75
30
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
1.6
3.0
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGF23N60UFD Rev. A






G23N60UFD Datasheet, Funktion
T = 25
C
100 TC = 100
10
100
V = 200V
R
I = 12A
F
TC = 25
TC = 100
10
1
0123
Forward Voltage Drop, VFM [V]
Fig 18. Forward Characteristics
600
VR = 200V
IF = 12A
500 TC = 25
TC = 100
400
300
200
100
0
100
di/dt [A/us]
Fig 20. Stored Charge
1000
1
100
di/dt [A/us]
Fig 19. Reverse Recovery Current
1000
100
V = 200V
R
IF = 12A
80
TC = 25
TC = 100
60
40
20
0
100
di/dt [A/us]
Fig 21. Reverse Recovery Time
1000
©2001 Fairchild Semiconductor Corporation
SGF23N60UFD Rev. A

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