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PDF LMUN5235DW1T3G Data sheet ( Hoja de datos )
| Número de pieza | LMUN5235DW1T3G | |
| Descripción | Dual Bias ResistorTransistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• We declare that the material of product compliance with RoHS requirements.
LMUN5211DW1T1G
Series
6
5
4
1
2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO 50 Vdc
Collector-Emitter Voltage
V CEO 50 Vdc
Collector Current
I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
R θJA
670 (Note 1.) °C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
PD
R θJA
R θJL
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
Rev.O 1/10
1 page  
LESHAN RADIO COMPANY, LTD.
LMUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)(Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN5211DW1T1, G
MUN5212DW1T1, G
MUN5213DW1T1, G
MUN5214DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5230DW1T1, G
MUN5215DW1T1, G
MUN5216DW1T1, G
MUN5231DW1T1, G
MUN5232DW1T1, G
MUN5236DW1T1, G
MUN5237DW1T1, G
VOH
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
Input Resistor
MUN5211DW1T1, G
MUN5212DW1T1, G
MUN5213DW1T1, G
MUN5214DW1T1, G
MUN5215DW1T1, G
MUN5216DW1T1, G
MUN5230DW1T1, G
MUN5231DW1T1, G
MUN5232DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5236DW1T1, G
MUN5237DW1T1, G
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
Resistor Ratio MUN5211DW1T1, G/MUN5212DW1T1, G/
MUN5213DW1T1, G/MUN5236DW1T1, G
MUN5214DW1T1, G
MUN5215DW1T1, G/MUN5216DW1T1, G
MUN5230DW1T1, G/MUN5231DW1T1, G/MUN5232DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5237DW1T1, G
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
ALL MUN5211DW1T1 SERIES DEVICES
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Unit
Vdc
kW
300
250
200
150
100
50
0
− 50
RqJA = 833°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
Rev.O 5/10
5 Page | ||
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| PDF Descargar | [ Datasheet LMUN5235DW1T3G.PDF ] | |
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