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Teilenummer | FW812 |
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Beschreibung | N-Channel Silicon MOSFET | |
Hersteller | Sanyo | |
Logo | ||
Gesamt 4 Seiten Ordering number : ENA1806
FW812
SANYO Semiconductors
DATA SHEET
FW812
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance
• 4V drive
• Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW=10s)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
Ratings
35
±20
10
11.5
52
2.3
2.5
150
--55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7005A-003
5.0
85
0.2
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
1
1.27
0.1
1 : Source1
2 : Gate1
3 : Source2
TL
4 4 : Gate2
0.43 5 : Drain2
6 : Drain2
Electrical Connection
7 : Drain1
8 : Drain1
8765
SANYO : SOP8
W812
LOT No.
1234
http://semicon.sanyo.com/en/network
81110PA TK IM TC-00002270 No. A1806-1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ FW812 Schematic.PDF ] |
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